PART |
Description |
Maker |
JCE0648D03 |
6 Watts JCE Series DIP24 Plastic Case
|
XP Power Limited
|
2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz 170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz 170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor 40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
UTV120 UTV200 |
12 Watts, 26.5 Volts, Class A UHF Television - Band IV & V COMMON EMITTER transistor 20 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
|
GHZTECH[GHz Technology]
|
G150N50W4A |
Flange Mount Termination 150 Watts, 50楼? Flange Mount Termination 150 Watts, 50Ω
|
Anaren Microwave
|
PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦,1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
UMIL60 |
60 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz 60瓦,28伏特,AB类Defcom 225 - 400兆赫 60 Watts / 28 Volts / Class AB Defcom 225 - 400 MHz
|
ETC Electronic Theatre Controls, Inc. GHZTECH[GHz Technology]
|